Samsung mass-produces 2nd generation 10-nano level DRAM

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Samsung Electronics' new DRAM unit is said to be the world's first 2nd generation 10nm 8-gigabit DDR4 RAM.

Gyoyoung Jin, president of Memory Business at Samsung Electronics, said that this "aggressive" production expansion would "accommodate strong market demand".

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The company said by expanding the production of the 10-nanometer-level DRAMs, it plans to further strengthen the overall competitiveness.

The new 8Gb DD4 can operate at 3,600 megabits per second per pin compared to the 3,200 Mbps of the previous generation.

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A newly devised data sensing system enables a more accurate determination of the data stored in each cell, which leads to a significant increase in the level of circuit integration and manufacturing productivity, while an air spacer has been placed around bit lines to decrease parasitic capacitance.

To enable these achievements, Samsung has applied new technologies, without the use of an EUV process. Samsung says it will be able to bring to market DDR5, LPDDR5, HMB3, and GDDR6 earlier with these breakthroughs. What makes Samsung's DRAM rather "special" is the fact that it comes with improvements such as: smaller dimensions, 10% to 15% improvements in performance and efficiency, along with faster speed of operation as well (3.6Mbps). It is a type of memory that is typically used for data or program code that a computer processor needs to function.

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