512GB is double the storage offered by the most expensive iPhone X (£1149), for one, so Samsung could conceivably offer twice the capacity and improved performance for the same (or even a lower) price than Apple's flagship. Now, Samsung Electronics has announced that it has begun mass production of the industry's first 512GB embedded Universal Flash Storage (eUFS) solution for use in next-generation mobile devices. Imagine pairing a ton of storage alongside Qualcomm's Snapdragon 845 system-on-chip (SoC), or Samsung's recently announced Exynos 9810 (Samsung typically uses two SoCs for its flagship phones, tapping its own silicon for models that ship internationally and Qualcomm's hardware for U.S. variants). From the days of 4GB of built-in memory to the current 256GB of internal storage, it sure has been a huge jump. And the faster the flash memory, the quicker the phone will feel.
Unsurprisingly, you won't find any mention of the Galaxy S9 or Note 9 in the press release.
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Despite repeated attempts and messages, Collector Astik Kumar Pandey was not available for his comments on the issue. Pandey said the former Union minister was insisting that FIRs be lodged against bogus Bt cotton companies.
They 64-layer V-NAND chips should also do well in other embedded devices, which are expected to soon proliferate as 5G networks create possibilities for sophisticated devices in a great many locations.
The new 512GB UFS increases the density of the 256GB eUFS storage from 48 layers to 64 layers and also includes a controller chip. The company states that the package enables transferring a 5GB-equivalent Full HD video clip to an SSD in about six seconds-making it over eight times faster than a typical microSD card. The company added it would expand production of 256Gb V-NAND chips, while it would be aggressive in ramping up the newer 64-layer 512Gb V-NAND chips. "This should meet the increase in demand for advanced embedded mobile storage, as well as for premium SSDs and removable memory cards with high density and performance". As for its performance, the new 512GB eUFS solution able to reach 860 and 255 MB/s in terms of sequential read and write speed respectively while its random read and write speed is rated at 42,000 and 40,000 IOPS.
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Sheeran also revealed that their song had been planned since May and that they finished recording it in September. Thanks to Ed Sheeran , we now know that Beyoncé has a really quirky habit.
This seems to suggest Samsung is keen on equipping plenty of products with lots and lots of storage.
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